Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$
| Autor: | Ran, Chen, Mi, Xinrun, Shen, Junying, Wang, Honghui, Yang, Kunya, Liu, Yan, Wang, Guiwen, Wang, Guoyu, Shi, Youguo, Wang, Aifeng, Chai, Yisheng, Yang, Xiaolong, He, Mingquan, Tong, Xin, Zhou, Xiaoyuan |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Phys. Rev. B 108, 125103 (2023) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevB.108.125103 |
| Popis: | In the ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$, colossal magnetoresistance (CMR) arises below $T_\mathrm{c}=78$ K due to the interplay of magnetism and topological nodal-line fermiology. The Berry curvature associated with the topological nodal-line is expected to produce an anomalous Nernst effect. Here, we present sizable anomalous Nernst signal in Mn$_3$Si$_2$Te$_6$ below $T_\mathrm{c}$. In the low-magnetic-field region where CMR is most apparent, the scaling ratio between the Nernst signal and magnetization is significantly enhanced compared to that in conventional magnetic materials. The enhanced Nernst effect and CMR likely share the same mechanisms, which are closely linked to the nodal-line topology. Comment: 6 pages, 4 figures |
| Databáze: | arXiv |
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