Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

Autor: Vaz, Diogo C., Lin, Chia-Ching, Plombon, John J., Choi, Won Young, Groen, Inge, Arango, Isabel C., Chuvilin, Andrey, Hueso, Luis E., Nikonov, Dmitri E., Li, Hai, Debashis, Punyashloka, Clendenning, Scott B., Gosavi, Tanay A., Huang, Yen-Lin, Prasad, Bhagwati, Ramesh, Ramamoorthy, Vecchiola, Aymeric, Bibes, Manuel, Bouzehouane, Karim, Fusil, Stephane, Garcia, Vincent, Young, Ian A., Casanova, Fèlix
Rok vydání: 2023
Předmět:
Druh dokumentu: Working Paper
Popis: With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a relatively unexplored pathway with sparse results at a device level. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO$_3$ and ferromagnetic CoFe, for the writing, and spin-to-charge current conversion between CoFe and Pt, for the reading. Unlike other current-based spintronic devices, magnetization writing is driven solely by voltage pulses. We show that, upon electrical switching of the BiFeO$_3$, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. The voltage-induced switching is supported through a combination of piezoresponse, magnetic force microscopy, and scanning nitrogen-vacancy magnetometry, where magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO$_3$. This study constitutes the building block for magnetoelectric spin-orbit logic, as well as a new avenue for low-power beyond-CMOS technologies.
Comment: 17 pages, 5 figures
Databáze: arXiv