Cavity-enhanced single artificial atoms in silicon
| Autor: | Saggio, Valeria, Errando-Herranz, Carlos, Gyger, Samuel, Panuski, Christopher, Prabhu, Mihika, De Santis, Lorenzo, Christen, Ian, Ornelas-Huerta, Dalia, Raniwala, Hamza, Gerlach, Connor, Colangelo, Marco, Englund, Dirk |
|---|---|
| Rok vydání: | 2023 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile and robust photonic qubits. The central requirements for the spin-photon interface at the heart of these systems are long spin coherence times and efficient spin-photon coupling at telecommunication wavelengths. Artificial atoms in silicon have a unique potential to combine the long coherence times of spins in silicon with telecommunication wavelength photons in the world's most advanced microelectronics and photonics platform. However, a current bottleneck is the naturally weak emission rate of artificial atoms. An open challenge is to enhance this interaction via coupling to an optical cavity. Here, we demonstrate cavity-enhanced single artificial atoms at telecommunication wavelengths in silicon. We optimize photonic crystal cavities via inverse design and show controllable cavity-coupling of single G-centers in the telecommunications O-band. Our results illustrate the potential to achieve a deterministic spin-photon interface in silicon at telecommunication wavelengths, paving the way for scalable quantum information processing. Comment: 14 pages, 10 figures |
| Databáze: | arXiv |
| Externí odkaz: |
|