Fractional Marcus-Hush-Chidsey-Yakopcic current-voltage model for redox-based resistive memory devices

Autor:	Paradezhenko, Georgii, Prodan, Dmitrii, Pervishko, Anastasiia, Yudin, Dmitry, Allagui, Anis
Rok vydání:	2023
Předmět:	Condensed Matter - Materials Science Physics - Applied Physics
Zdroj:	Phys. Chem. Chem. Phys. 26, 621 (2024)
Druh dokumentu:	Working Paper
Popis:	We propose a circuit-level model combining the Marcus-Hush-Chidsey electron current equation and the Yakopcic equation for the state variable for describing resistive switching memory devices of the structure metal-ionic conductor-metal. We extend the dynamics of the state variable originally described by a first-order time derivative by introducing a fractional derivative with an arbitrary order between zero and one. We show that the extended model fits with great fidelity the current-voltage characteristic data obtained on a Si electrochemical metallization memory device with Ag-Cu alloy. Comment: 7 pages, 3 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2302.09407 Zobrazit plný text záznamu View this record from Arxiv