Gatemon qubit based on a thin InAs-Al hybrid nanowire
| Autor: | Huo, Jierong, Xia, Zezhou, Li, Zonglin, Zhang, Shan, Wang, Yuqing, Pan, Dong, Liu, Qichun, Liu, Yulong, Wang, Zhichuan, Gao, Yichun, Zhao, Jianhua, Li, Tiefu, Ying, Jianghua, Shang, Runan, Zhang, Hao |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Chin. Phys. Lett. 40, 047302 (2023) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1088/0256-307X/40/4/047302 |
| Popis: | We study a gate-tunable superconducting qubit (gatemon) based on a thin InAs-Al hybrid nanowire. Using a gate voltage to control its Josephson energy, the gatemon can reach the strong coupling regime to a microwave cavity. In the dispersive regime, we extract the energy relaxation time $T_1\sim$0.56 $\mu$s and the dephasing time $T_2^* \sim$0.38 $\mu$s. Since thin InAs-Al nanowires can have fewer or single sub-band occupation and recent transport experiment shows the existence of nearly quantized zero-bias conductance peaks, our result holds relevancy for detecting Majorana zero modes in thin InAs-Al nanowires using circuit quantum electrodynamics. Comment: Raw data and processing codes within this paper are available at: https://doi.org/10.5281/zenodo.7620737 |
| Databáze: | arXiv |
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