High-Resolution Short-Circuit Fault Localization in a Multi-Layer Integrated Circuit using a Quantum Diamond Microscope
| Autor: | Kehayias, P., Walraven, J., Rodarte, A. L., Mounce, A. M. |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Phys. Rev. Applied 20, 014036 (2023) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevApplied.20.014036 |
| Popis: | As integrated circuit (IC) geometry and packaging become more sophisticated with ongoing fabrication and design innovations, the electrical engineering community needs increasingly-powerful failure analysis (FA) methods to meet the growing troubleshooting challenges of multi-layer (with multiple metal layers) and multi-chip components. In this work, we investigate a new electronics FA method using a quantum diamond microscope (QDM) to image the magnetic fields from short-circuit faults. After quantifying the performance by detecting short-circuit faults in a multi-layer silicon die, we assess how a QDM would detect faults in a heterogeneously integrated (HI) die stack. This work establishes QDM-based magnetic imaging as a competitive technique for electronics FA, offering high spatial resolution, high sensitivity, and robust instrumentation. We anticipate these advantages to be especially useful for finding faults deep within chip-stack ICs with many metal layers, optically-opaque layers, or optically-scattering layers. Comment: 9 pages main text (6 figures), 5 pages supplementary information (4 figures) |
| Databáze: | arXiv |
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