Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
| Autor: | Völkel, Lukas, Braun, Dennis, Belete, Melkamu, Kataria, Satender, Wahlbrink, Thorsten, Ran, Ke, Kistermann, Kevin, Mayer, Joachim, Menzel, Stephan, Daus, Alwin, Lemme, Max C. |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Advanced Functional Materials, 202300428, 2023 |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1002/adfm.202300428 |
| Popis: | The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large switching window. Metal filament formation is frequently suggested for h-BN devices as the resistive switching (RS) mechanism, usually supported by highly specialized methods like conductive atomic force microscopy (C-AFM) or transmission electron microscopy (TEM). Here, we investigate the switching of multilayer hexagonal boron nitride (h-BN) threshold memristors with two nickel (Ni) electrodes through their current conduction mechanisms. Both the high and the low resistance states are analyzed through temperature-dependent current-voltage measurements. We propose the formation and retraction of nickel filaments along boron defects in the h-BN film as the resistive switching mechanism. We corroborate our electrical data with TEM analyses to establish temperature-dependent current-voltage measurements as a valuable tool for the analysis of resistive switching phenomena in memristors made of 2D materials. Our memristors exhibit a wide and tunable current operation range and low stand-by currents, in line with the state of the art in h-BN-based threshold switches, a low cycle-to-cycle variability of 5%, and a large On/Off ratio of 10${^7}$. Comment: 39 pages |
| Databáze: | arXiv |
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