Autor: |
Hanzawa, Kota, Matsumoto, Jumpei, Iimura, Soshi, Kohama, Yoshimitsu, Hiramatsu, Hidenori, Hosono, Hideo |
Rok vydání: |
2022 |
Předmět: |
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Zdroj: |
Phys. Rev. Materials 6, L111801 (2022) |
Druh dokumentu: |
Working Paper |
DOI: |
10.1103/PhysRevMaterials.6.L111801 |
Popis: |
The electronic transport properties of a highly hydrogen-substituted 1111-type SmFeAsO epitaxial film with high critical-temperature (Tc = 45 K) were investigated under high magnetic fields. By using a single-turn magnet generating up to 130 T, we clarified that the upper critical field ({\mu}0Hc2) of SmFeAsO0.65H0.35 is 120 T at the nearly low-temperature limit of 2.2 K for {\mu}0H || ab. The angular dependence of {\mu}0Hc2 revealed that the anisotropic parameter ({\gamma}) around Tc is ~2, which is comparable with that of a practical candidate 122-type BaFe2As2 with lower Tc and much smaller than that of F-substituted SmFeAsO. The small {\gamma} mainly originates from the high hydrogen incorporation. The extremely high {\mu}0Hc2 and small {\gamma}, together with the high Tc and high critical current density, suggest that SmFeAsO1-xHx has high potential for the superconducting electromagnets and cables. |
Databáze: |
arXiv |
Externí odkaz: |
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