Autor: |
Cheng, L., Da, B., Liu, X., Shigeto, K., Tsukagoshi, K., Nabatame, T., Liu, J. W., Zhang, H., Yoshikawa, H., Tanuma, S., Gao, Z. S., Guo, H. X., Sun, Y., Hu, J., Ding, Z. J. |
Rok vydání: |
2022 |
Předmět: |
|
Druh dokumentu: |
Working Paper |
Popis: |
We report a promising InSiO film that allows simultaneous observation of sample morphology and Kikuchi patterns in raster scan mode of scanning electron microscopy. This new experimental observation suggests potential mechanism beyond existing diffraction theories. We find by simulation that this material has a novel cylindrically symmetric rotational crystalline structure that can control the diffraction direction of electrons through a specific rotational distribution of crystal planes, while being independent of the angle and energy of incident electrons within a certain range. |
Databáze: |
arXiv |
Externí odkaz: |
|