A light-induced Weyl semiconductor-to-metal transition mediated by Peierls instability

Autor: Ning, H., Mehio, O., Lian, C., Li, X., Zoghlin, E., Zhou, P., Cheng, B., Wilson, S. D., Wong, B. M., Hsieh, D.
Rok vydání: 2022
Předmět:
Zdroj: Phys. Rev. B 106, 205118 (2022)
Druh dokumentu: Working Paper
DOI: 10.1103/PhysRevB.106.205118
Popis: Elemental tellurium is a strongly spin-orbit coupled Peierls-distorted semiconductor whose band structure features topologically protected Weyl nodes. Using time-dependent density functional theory calculations, we show that impulsive optical excitation can be used to transiently control the amplitude of the Peierls distortion, realizing a mechanism to switch tellurium between three states: Weyl semiconductor, Weyl metal and non-Weyl metal. Further, we present experimental evidence of this inverse-Peierls distortion using time-resolved optical second harmonic generation measurements. These results provide a pathway to multifunctional ultrafast Weyl devices and introduce Peierls systems as viable hosts of light-induced topological transitions.
Comment: 7 pages main text, 4 figures, 11 pages supplementary information
Databáze: arXiv