Thermal annealing effects on Graphene/n-Si Schottky junction Solar cell: Removal of PMMA residues

Autor:	Ono, Yuzuki, Im, Hojun
Rok vydání:	2022
Předmět:	Condensed Matter - Materials Science Physics - Applied Physics
Zdroj:	Jpn. J. Appl. Phys. 62, 045002 (2003)
Druh dokumentu:	Working Paper
DOI:	10.35848/1347-4065/acca57
Popis:	Thermal annealing is one of most effective way to improve the efficiency of graphene/n-Si Schottky junction solar cell. Here, its underlying mechanism has been investigated by comparative studies in terms of the removal of polymethyl methacrylate (PMMA) residues, using the J-V characteristics, the transient photocurrent and photovoltage measurements. Experimental results have revealed that there are trap states which are originated from the PMMA residues and cause the large photocurrent leakage as the intensity of the incident light increases. It is also found that the PMMA residues accelerate deterioration and rapidly invalidate hole doping effects. Such undesirable PMMA residues were effectively removed by the thermal annealing treatments, serving to reduce the photocurrent leakage and to increase the stability. Comment: 18 pages, 7 figures, 5 tables
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2209.08365 Zobrazit plný text záznamu View this record from Arxiv