Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well

Autor:	Lei, Zijin, Cheah, Erik, Krizek, Filip, Schott, Rüdiger, Bähler, Thomas, Märki, Peter, Wegscheider, Werner, Shayegan, Mansour, Ihn, Thomas, Ensslin, Klaus
Rok vydání:	2022
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
DOI:	10.1103/PhysRevResearch.5.013117
Popis:	Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak anti-localization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov-de Haas oscillations. Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. The g-factor of the two-dimensional hole system decreases rapidly with increasing carrier density. Comment: 10 pages, 7 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2208.10427 Zobrazit plný text záznamu View this record from Arxiv