A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure
| Autor: | Xu, Ru, Chen, Peng, Zhou, Jing, Li, Yimeng, Li, Yuyin, Zhu, Tinggang, Chen, Dunjun, Xie, Zili, Ye, Jiandong, Xiu, Xiangqian, Zhang, Rong, Zheng, Youdou |
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| Rok vydání: | 2022 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | In this letter, we demonstrate a lateral AlGaN/GaN Schottky barrier diode (SBD) on sapphire substrate with low turn-on voltage (Von) and high breakdown voltage (VBK). By using a double barrier anode (DBA) structure formed by the mixture of Platinum (Pt) and Tantalum (Ta), the Von of the SBD can be as low as 0.36 V with a leakage current of 2.5E-6 A/mm. Supported by the high-quality carbon-doped GaN buffer on sapphire, the VBK can reach more than 10 kV with the anode-to-cathode spacing of 85 {\mu}m. Combining the VBK and the specific on-resistance (Ron,sp) of 25.1 m{\Omega}.cm^2, the power figure of merit of the SBD can reach 4.0 GW/cm^2, demonstrating a great potential for the application in ultra-high-voltage electronics. Comment: 4 pages, 4 figures and 1 table. This work has ever been successfully submitted to the IEEE Electron Device Letters for possible publication in Jan. 2022, and the manuscript ID is EDL-2022-01-0014. Finally, it is suggested to be submitted to another journal such as IEEE TED |
| Databáze: | arXiv |
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