Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers
| Autor: | Shang, Chen, Feng, Kaiyin, Hughes, Eamonn T., Clark, Andrew, Debnath, Mukul, Koscica, Rosalyn, Leake, Gerald, Herman, Joshua, Harame, David, Ludewig, Peter, Wan, Yating, Bowers, John E. |
|---|---|
| Rok vydání: | 2022 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III-V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region to the Si-on-Insulator (SOI) waveguides. Here, we demonstrate the first electrically pumped QD lasers grown on a 300 mm patterned (001) Si wafer with a butt-coupled configuration by molecular beam epitaxy (MBE). Unique growth and fabrication challenges imposed by the template architecture have been resolved, contributing to continuous wave lasing to 60 {\deg}C and a maximum double-side output power of 126.6 mW at 20 {\deg}C with a double-side wall plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low-loss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production. Comment: 11 pages including references, 6 figures |
| Databáze: | arXiv |
| Externí odkaz: |
|