Scattering anisotropy in HgTe (013) quantum well
| Autor: | Khudaiberdiev, D. A., Savchenko, M. L., Kozlov, D. A., Mikhailov, N. N., Kvon, Z. D. |
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| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | Appl. Phys. Lett. 121, 083101 (2022) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/5.0101932 |
| Popis: | We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well of 22 nm width in the directions $[100]$ and $[03\bar{1}]$ as the function of the electron density $n$. The anisotropy is absent at minimal electron density near the charge neutrality point. The anisotropy increases with the increase of n and reaches about 10% when the Fermi level is within the first subband H1. There is a sharp increase of the anisotropy (up to 60%) when the Fermi level reaches the second subband E2. We conclude that the first effect is due to the small intra-subband anisotropic interface roughness scattering, and the second one is due to the strongly anisotropic inter-subband roughness scattering, but the microscopical reason of such a strong change in the anisotropy remains unknown. Comment: 4 pages, 5 figures, published in Applied Physics Letters |
| Databáze: | arXiv |
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