| Autor: |
He, Wenqing, Wan, Caihua, Zheng, Cuixiu, Wang, Yizhan, Wang, Xiao, Ma, Tianyi, Wang, Yuqiang, Guo, Chenyang, Luo, Xuming, Stebliy, Maksim. E., Yu, Guoqiang, Liu, Yaowen, Ognev, Alexey V., Samardak, Alexander S., Han, Xiufeng |
| Rok vydání: |
2022 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1021/acs.nanolett.1c04786 |
| Popis: |
Perpendicularly magnetized structures that are switchable using a spin current under field-free conditions can potentially be applied in spin-orbit torque magnetic random-access memory(SOT-MRAM).Several structures have been developed;however,new structures with a simple stack structure and MRAM compatibility are urgently needed.Herein,a typical structure in a perpendicular spin-transfer torque MRAM,the Pt/Co multilayer and its synthetic antiferromagnetic counterpart with perpendicular magnetic anisotropy, was observed to possess an intrinsic interlayer chiral interaction between neighboring magnetic layers,namely the interlayer Dzyaloshinskii-Moriya interaction (DMI) effect. Furthermore, using a current parallel to the eigenvector of the interlayer DMI, we switched the perpendicular magnetization of both structures without a magnetic field, owing to the additional symmetry-breaking introduced by the interlayer DMI. This SOT switching scheme realized in the Pt/Co multilayer and its synthetic antiferromagnet structure may open a new avenue toward practical perpendicular SOT-MRAM and other SOT devices. |
| Databáze: |
arXiv |
| Externí odkaz: |
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