| Autor: |
Li, Mingxiao, Chang, Lin, Wu, Lue, Staffa, Jeremy, Ling, Jingwei, Javid, Usman A., He, Yang, Lopez-rios, Raymond, Xue, Shixin, Morin, Theodore J., Shen, Boqiang, Wang, Heming, Zeng, Siwei, Zhu, Lin, Vahala, Kerry J., Bowers, John E., Lin, Qiang |
| Rok vydání: |
2022 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1038/s41467-022-33101-6 |
| Popis: |
The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0$\times$10$^{18}$ Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR. |
| Databáze: |
arXiv |
| Externí odkaz: |
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