| Autor: |
Chen, Xiangping, Xing, Xianqin, Liu, Wenyu, Lu, Zhanjie, Ying, Hao, Huang, Le, Zhang, Zhiyong, Wu, Shunqing, Cheng, Zhihai, Chen, Shanshan |
| Rok vydání: |
2022 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
In this work, a novel method to grow high-quality and large bilayer graphene (BLG) directly on various dielectric substrates was demonstrated. Large area single-crystal monolayer graphene was applied as a seeding layer to facilitate the homo-epitaxial synthesis of single crystal BLG directly on insulating substrates. The Cu nano-powders (Cu NP) with nanostructure and high surface-area were used as the remote catalysis to provide long-lasting catalytic activity during the graphene growth. The TEM results confirmed the single-crystalline nature of the BLG domains, which validates the superiority of the homo-epitaxial growth technique. The as-grown BLG show comparable quality with the CVD-grown BLG on metal surface. Field-effect transistors directly fabricated on the as-grown BLG/SiO$ _2 $/Si showed a room temperature carrier mobility as high as 2297 cm $ ^2 $ V$ ^{-1}$ s $^{-1} $. |
| Databáze: |
arXiv |
| Externí odkaz: |
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