| Autor: |
Islam, Raisul, Qin, Shengjun, Deshmukh, Sanchit, Yu, Zhouchangwan, Koroglu, Cagil, Khan, Asir Intisar, Schauble, Kirstin, Saraswat, Krishna C., Pop, Eric, Wong, H. -S. Philip |
| Rok vydání: |
2022 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| DOI: |
10.1063/5.0101417 |
| Popis: |
Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable memory states instead of gradual switching between multiple resistance states. Here, we demonstrate that a thermal barrier of $Ge_2Sb_2Te_5$ (GST) between $HfO_x$ and the bottom electrode (TiN) enables wider and weaker filaments, by promoting heat spreading laterally inside the $HfO_x$. Scanning thermal microscopy suggests that $HfO_x+GST$ devices have a wider heating region than control devices with only $HfO_x$, indicating the formation of a wider filament. Such wider filaments can have multiple stable conduction paths, resulting in a memory device with more gradual and linear switching. The thermally-enhanced $HfO_x+GST$ devices also have higher on/off ratio ($>10^3$) than control devices ($<10^2$), and a median set voltage lower by approximately 1 V (~35%), with a corresponding reduction of the switching power. Our $HfO_x+GST$ RRAM shows 2x gradual switching range using fast (~ns) identical pulse trains with amplitude less than 2 V. |
| Databáze: |
arXiv |
| Externí odkaz: |
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