Autor: |
Kliemt, Kristin, Peters, Marius, Reiser, Isabel, Ocker, Michelle, Walther, Franziska, Tran, Doan-My, Cho, Eunhyung, Merz, Michael, Haghighirad, Amir A., Hezel, Dominik C., Ritter, Franz, Krellner, Cornelius |
Rok vydání: |
2022 |
Předmět: |
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Druh dokumentu: |
Working Paper |
DOI: |
10.1021/acs.cgd.2c00475 |
Popis: |
Single crystals of intermediate valent EuPd$_2$Si$_2$ were grown from an Eu-rich melt by the Bridgman as well as the Czochralski technique. The chemical and structural characterization of an extracted single crystalline Czochralski-grown specimen yielded a slight variation of the Si-Pd ratio along the growth direction and confirms the existence of a finite Eu(Pd$_{1-m}$Si$_m$)$_2$ homogeneity range. The thorough physical characterization carried out on the same crystal showed that this tiny variation in the composition strongly affects the temperature T$_v$ at which the valence transition occurs. These experiments demonstrate a strong coupling between structural and physical properties in the prototypical valence-fluctuating system EuPd$_2$Si$_2$ and explain the different reported values of T$_v$. |
Databáze: |
arXiv |
Externí odkaz: |
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