Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations

Autor:	Esmanhotto, E., Hirtzlin, T., Castellani, N., Martin, S., Giraud, B., Andrieu, F., Nodin, J. F., Querlioz, D., Portal, J-M., Vianello, E.
Rok vydání:	2022
Předmět:	Computer Science - Emerging Technologies
Druh dokumentu:	Working Paper
Popis:	Crossbar arrays of resistive memories (RRAM) hold the promise of enabling In-Memory Computing (IMC), but essential challenges due to the impact of device imperfection and device endurance have yet to be overcome. In this work, we demonstrate experimentally an RRAM-based IMC logic concept with strong resilience to RRAM variability, even after one million endurance cycles. Our work relies on a generalization of the concept of in-memory Scouting Logic, and we demonstrate it experimentally with up to 16 parallel devices (operands), a new milestone for RRAM in-memory logic. Moreover, we combine IMC with Multi-Level-Cell programming and demonstrate experimentally, for the first time, an IMC RRAM-based MLC 2-bit adder. Comment: Preprint for IRPS2022
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2203.01680 Zobrazit plný text záznamu View this record from Arxiv