1/f Noise Under Drift And Thermal Agitation In Semiconductor Materials
| Autor: | Grueneis, Ferdinand |
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| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | Physica A 593 (2022) 126917 |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1016/j.physa2022.126917 |
| Popis: | Voss and Clarke observed 1/f noise in the square of Johnson noise across samples in thermal equilibrium without applying a current. We refer to this phenomenon as thermal 1/f noise. Voss and Clarke suggested spatially correlated temperature fluctuations as an origin of thermal 1/f noise; they also showed that thermal 1/f noise closely matches the 1/f spectrum obtained by passing a current through the sample. An intermittent generation-recombination (g-r) process has recently been introduced to interpret 1/f noise in semiconductors. The square of this intermittent g-r process generates a 1/f noise component which correlates with Voss and Clarke's empirical findings. Traps which intermittently rather than continuously generate g-r pulses are suggested as the origin of 1/f noise under drift and thermal agitation. We see no need to introduce correlated temperature fluctuations or oxide traps with a large distribution of time constants to explain 1/f noise. Comment: 9 pages, 6 figures |
| Databáze: | arXiv |
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