| Autor: |
Tosato, A., Ferrari, B. M., Sammak, A., Hamilton, A. R., Veldhorst, M., Virgilio, M., Scappucci, G. |
| Rok vydání: |
2022 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| Popis: |
We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of 3.34$\times$10$^5$ cm$^2$/Vs and a low percolation density of 2.38$\times$10$^{10}$ cm$^{-2}$. We resolve the individual population of the channels from the interference patterns of the Landau fan diagram. At a density of 2.0$\times$10$^{11}$ cm$^{-2}$ the system is in resonance and we observe an anti-crossing of the first two bilayer subbands characterized by a symmetric-antisymmetric gap of $\sim$0.69 meV, in agreement with Schr\"odinger-Poisson simulations. |
| Databáze: |
arXiv |
| Externí odkaz: |
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