Superconductivity and parity preservation in as-grown In islands on InAs nanowires
Autor: | Bjergfelt, Martin Saurbrey, Carrad, Damon J., Kanne, Thomas, Johnson, Erik, Fiordaliso, Elisabetta M., Jespersen, Thomas Sand, Nygård, Jesper |
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Rok vydání: | 2021 |
Předmět: | |
Druh dokumentu: | Working Paper |
DOI: | 10.1021/acs.nanolett.1c02487 |
Popis: | We report in-situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In crystals grew in a tetragonal body-centred crystal structure within two families of orientations relative to wurtzite InAs. The crystalline islands had lengths < 500 nm and low-energy surfaces, suggesting that growth was driven mainly by surface energy minimization. Electrical transport through In/InAs devices exhibited Cooper pair charging, evidencing charge parity preservation and a pristine In/InAs interface, with an induced superconducting gap ~ 0.45 meV. Cooper pair charging persisted to temperatures > 1.2 K and magnetic fields ~ 0.7 T, demonstrating that In/InAs hybrids belong to an expanding class of semiconductor/superconductor hybrids operating over a wider parameter space than state-of-the-art Al-based hybrids. Engineering crystal morphology while isolating single islands using shadow epitaxy provides an interesting alternative to previous semiconductor/superconductor hybrid morphologies and device geometries. Comment: Published in Nano Letters: https://pubs.acs.org/doi/10.1021/acs.nanolett.1c02487 |
Databáze: | arXiv |
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