2D Metal Selenide-Silicon Steep Sub-Threshold Heterojunction Triodes with High On-Current Density

Autor:	Miao, Jinshui, Leblanc, Chloe, Liu, Xiwen, Song, Baokun, Zhang, Huairuo, Krylyuk, Sergiy, Davydov, Albert V., Back, Tyson, Glavin, Nicholas, Jariwala, Deep
Rok vydání:	2021
Předmět:	Physics - Applied Physics Condensed Matter - Mesoscale and Nanoscale Physics Condensed Matter - Materials Science Condensed Matter - Other Condensed Matter
Druh dokumentu:	Working Paper
Popis:	Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit steep sub-threshold slope (SS) transfer characteristics are an attractive option in this regard. However, current generation of Si and III-V heterojunction based TFETs while suffer from low ON current density and ON/OFF current ratios for < 60 mV/dec operation. Semiconducting two-dimensional (2D) layers have recently renewed enthusiasm in novel device design for TFETs not only because of their atomically-thin bodies that favor superior electrostatic control but the same feature also favors higher ON current density and consequently high ON/OFF ratio. Here, we demonstrate gate-tunable heterojunction diodes (triodes) fabricated from InSe/Si 2D/3D van der Waals heterostructures, with a minimum subthreshold swing (SS) as low as 6.4 mV/dec and an SS average of 30 mV/dec over 4 decades of current. Further, the devices show a large current on/off ratio of approximately 10^6 and on-state current density of 0.3 uA/um at a drain bias of -1V. Our work opens new avenues for 2D semiconductors for 3D hetero-integration with Si to achieve ultra-low power logic devices. Comment: 5 figures and supporting information
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2111.06396 Zobrazit plný text záznamu View this record from Arxiv