A scalable network model for electrically tunable ferroelectric domain structure in twistronic bilayers of two-dimensional semiconductors

Autor: Enaldiev, V. V., Ferreira, F., Fal'ko, V. I.
Rok vydání: 2021
Předmět:
Zdroj: Nano Letters (2022)
Druh dokumentu: Working Paper
DOI: 10.1021/acs.nanolett.1c04210
Popis: Moir\'e structures in small-angle-twisted bilayers of two-dimensional semiconductors with a broken-symmetry interface form arrays of ferroelectric domains with periodically alternating out-of-plane polarization. Here, we propose a network theory for the tunability of such FE domain structure by applying an electric field perpendicular to the 2D crystal. Using multiscale analysis, we derive a fully parametrized string-theory-like description of the domain wall network and show that it undergoes a qualitative change, after the arcs of partial dislocation like domain walls merge (near the network nodes) into streaks of perfect screw dislocations, which happens at a threshold displacement field dependent on the DWN period.
Databáze: arXiv