| Autor: |
Casamento, Joseph, Lee, Hyunjea, Maeda, Takuya, Gund, Ved, Nomoto, Kazuki, van Deurzen, Len, Lal, Amit, Huili, Xing, Jena, Debdeep |
| Rok vydání: |
2021 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1063/5.0075636 |
| Popis: |
Epitaxial Sc$_x$Al$_{1-x}$N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity ($\epsilon_r$) values relative to AlN. $\epsilon_r$ values of ~17 to 21 for Sc contents of 17 to 25% (x=0.17 to 0.25) measured electrically by capacitance-voltage (CV) measurements at 500 kHz frequency indicate Sc$_x$Al$_{1-x}$N has the largest relative dielectric permittivity of any existing nitride material. This points toward the usage of Sc$_x$Al$_{1-x}$N as potential epitaxial, single-crystalline dielectric material that can be deposited in situ on GaN and AlN electronic and photonic devices for enhanced performance. |
| Databáze: |
arXiv |
| Externí odkaz: |
|
