Growth, characterization and Chern insulator state in MnBi$_2$Te$_4$ via the chemical vapor transport method
| Autor: | Hu, Chaowei, Gao, Anyuan, Berggren, Bryan Stephen, Li, Hong, Kurleto, Rafał, Narayan, Dushyant, Zeljkovic, Ilija, Dessau, Dan, Xu, Suyang, Ni, Ni |
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| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | Phys. Rev. Materials 5, 124206 (2021) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevMaterials.5.124206 |
| Popis: | As the first intrinsic antiferromagnetic topological insulator, MnBi$_2$Te$_4$ has provided a platform to investigate the interplay of band topology and magnetism as well as the emergent phenomena arising from such an interplay. Here we report the chemical-vapor-transport (CVT) growth and characterization of MnBi$_2$Te$_4$, as well as the observation of the field-induced quantized Hall conductance in 6-layer devices. Through comparative studies between our CVT-grown and flux-grown MnBi$_2$Te$_4$ via magnetic, transport, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy measurements, we find that CVT-grown MnBi$_2$Te$_4$ is marked with higher Mn occupancy on the Mn site, slightly higher Mn$_{\rm{Bi}}$ antisites, smaller carrier concentration and a Fermi level closer to the Dirac point. Furthermore, a 6-layer device made from the CVT-grown sample shows by far the highest mobility of 2500 cm$^2$V$\cdot$s in MnBi$_2$Te$_4$ devices with the quantized Hall conductance appearing at 1.8 K and 8 T. Our study provides a new route to obtain high-quality single crystals of MnBi$_2$Te$_4$ that are promising to make superior devices and realize emergent phenomena, such as the layer Hall effect and quantized anomalous hall effect, etc. Comment: 5 figures |
| Databáze: | arXiv |
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