| Autor: |
Nakata, Yuki, Sugawara, Katsuaki, Chainani, Ashish, Oka, Hirofumi, Bao, Changhua, Zhou, Shaohua, Chuang, Pei-Yu, Cheng, Cheng-Maw, Kawakami, Tappei, Saruta, Yasuaki, Fukumura, Tomoteru, Zhou, Shuyun, Takahashi, Takashi, Sato, Takafumi |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Nature Communications 12, 5873 (2021) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1038/s41467-021-26105-1 |
| Popis: |
Combination of low-dimensionality and electron correlation is vital for exotic quantum phenomena such as the Mott-insulating phase and high-temperature superconductivity. Transition-metal dichalcogenide (TMD) 1T-TaS2 has evoked great interest owing to its unique nonmagnetic Mott-insulator nature coupled with a charge-density-wave (CDW). To functionalize such a complex phase, it is essential to enhance the CDW-Mott transition temperature TCDW-Mott, whereas this was difficult for bulk TMDs with TCDW-Mott < 200 K. Here we report a strong-coupling 2D CDW-Mott phase with a transition temperature onset of ~530 K in monolayer 1T-TaSe2. Furthermore, the electron correlation derived lower Hubbard band survives under external perturbations such as carrier doping and photoexcitation, in contrast to the bulk counterpart. The enhanced Mott-Hubbard and CDW gaps for monolayer TaSe2 compared to NbSe2, originating in the lattice distortion assisted by strengthened correlations and disappearance of interlayer hopping, suggest stabilization of a likely nonmagnetic CDW-Mott insulator phase well above the room temperature. The present result lays the foundation for realizing monolayer CDW-Mott insulator based devices operating at room temperature. |
| Databáze: |
arXiv |
| Externí odkaz: |
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