| Autor: |
Buijtendorp, B. T., Vollebregt, S., Karatsu, K., Thoen, D. J., Murugesan, V., Kouwenhoven, K., Hähnle, S., Baselmans, J. J. A., Endo, A. |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
Phys. Rev. Appl. 18 (2022) 064003 |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1103/PhysRevApplied.18.064003 |
| Popis: |
Low-loss deposited dielectrics will benefit superconducting devices such as integrated superconducting spectrometers, superconducting qubits and kinetic inductance parametric amplifiers. Compared with planar structures, multi-layer structures such as microstrips are more compact and eliminate radiation loss at high frequencies. Multi-layer structures are most easily fabricated with deposited dielectrics, which typically exhibit higher dielectric loss than crystalline dielectrics. We measured the sub-kelvin and low-power microwave and mm-submm wave dielectric loss of hydrogenated amorphous silicon carbide (a-SiC:H), using a superconducting chip with NbTiN/a-SiC:H/NbTiN microstrip resonators. We deposited the a-SiC:H by plasma-enhanced chemical vapor deposition at a substrate temperature of 400{\deg}C. The a-SiC:H has a mm-submm loss tangent ranging from $0.80 \pm 0.01 \times 10^{-4}$ to $1.43 \pm 0.04 \times 10^{-4}$ in the range of 270 to 385 GHz. The microwave loss tangent is $3.2 \pm 0.2 \times 10^{-5}$. These are the lowest low-power sub-kelvin loss tangents that have been reported for microstrip resonators at mm-submm and microwave frequencies. We observe that the loss tangent increases with frequency. The a-SiC:H films are free of blisters and have low stress: $-$20 MPa compressive at 200 nm thickness to 60 MPa tensile at 1000 nm thickness. |
| Databáze: |
arXiv |
| Externí odkaz: |
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