Realization of graphene logics in an exciton-enhanced insulating phase
| Autor: | Yang, Kaining, Gao, Xiang, Wang, Yaning, Zhang, Tongyao, Gu, Pingfan, Luo, Zhaoping, Zheng, Runjie, Cao, Shimin, Wang, Hanwen, Sun, Xingdan, Watanabe, Kenji, Taniguchi, Takashi, Li, Xiuyan, Zhang, Jing, Dai, Xi, Chen, Jianhao, Ye, Yu, Han, Zheng Vitto |
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| Rok vydání: | 2021 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | For two decades, two-dimensional carbon species, including graphene, have been the core of research in pursuing next-generation logic applications beyond the silicon technology. Yet the opening of a gap in a controllable range of doping, whilst keeping high conductance outside of this gapped state, has remained a grand challenge in them thus far. Here we show that, by bringing Bernal-stacked bilayer graphene in contact with an anti-ferromagnetic insulator CrOCl, a strong insulating behavior is observed in a wide range of positive total electron doping $n_\mathrm{tot}$ and effective displacement field $D_\mathrm{eff}$ at low temperatures. Transport measurements further prove that such an insulating phase can be well described by the picture of an inter-layer excitonic state in bilayer graphene owing to electron-hole interactions. The consequential over 1 $\mathrm{G\Omega}$ excitonic insulator can be readily killed by tuning $D_\mathrm{eff}$ and/or $n_\mathrm{tot}$, and the system recovers to a high mobility graphene with a sheet resistance of less than 100 $\mathrm{\Omega}$. It thus yields transistors with "ON-OFF" ratios reaching 10$^{7}$, and a CMOS-like graphene logic inverter is demonstrated. Our findings of the robust insulating phase in bilayer graphene may be a leap forward to fertilize the future carbon computing. Comment: 10 pages, 4 figures |
| Databáze: | arXiv |
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