Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism
| Autor: | Li, Zhengxian, Huang, Kui, Guo, Deping, Ma, Guodong, Liu, Xiaolei, Wu, Yueshen, Yuan, Jian, Tao, Zicheng, Wang, Binbin, Wang, Xia, Zou, Zhiqiang, Yu, Na, Yu, Geliang, Xue, Jiamin, Li, Jun, Liu, Zhongkai, Ji, Wei, Guo, Yanfeng |
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| Rok vydání: | 2021 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | The weak antilocalization (WAL) effect is known as a quantum correction to the classical conductivity, which never appeared in two-dimensional magnets. In this work, we reported the observation of a WAL effect in the van der Waals ferromagnet Fe5-xGeTe2 with a Curie temperature Tc ~ 270 K, which can even reach as high as ~ 120 K. The WAL effect could be well described by the Hikami-Larkin-Nagaoka and Maekawa-Fukuyama theories in the presence of strong spin-orbit coupling (SOC). Moreover, A crossover from a peak to dip behavior around 60 K in both the magnetoresistance and magnetoconductance was observed, which could be ascribed to a rare example of temperature driven Lifshitz transition as indicated by the angle-resolved photoemission spectroscopy measurements and first principles calculations. The reflective magnetic circular dichroism measurements indicate a possible spin reorientation that kills the WAL effect above 120 K. Our findings present a rare example of WAL effect in two-dimensional ferromagnet and also a magnetotransport fingerprint of the strong SOC in Fe5-xGeTe2. The results would be instructive for understanding the interaction Hamiltonian for such high Tc itinerant ferromagnetism as well as be helpful for the design of next-generation room temperature spintronic or twistronic devices. Comment: main text 32 pages + SI 7 pages;main text 8 figures + SI 5 figures and 3 tables |
| Databáze: | arXiv |
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