| Autor: |
Tang, Alvin, Kumar, Aravindh, Jaikissoon, Marc, Saraswat, Krishna, Wong, H. -S. Philip, Pop, Eric |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
ACS Appl. Mater. Interfaces 13, 41866 (2021) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1021/acsami.1c06812 |
| Popis: |
Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source precursor synthesis of continuous monolayer (1L) MoS$_2$ films at 560 C in 50 min, within the 450-to-600 C, 2 h thermal budget window required for back-end-of-the-line compatibility with modern silicon technology. Transistor measurements reveal on-state current up to ~140 $\mathrm{{\mu}A/{\mu}m}$ at 1 V drain-to-source voltage for 100 nm channel lengths, the highest reported to date for 1L MoS$_2$ grown below 600 C using solid-source precursors. The effective mobility from transfer length method test structures is $\mathrm{29 \pm 5\ cm^2V^{-1}s^{-1}}$ at $\mathrm{6.1 \times 10^{12}\ cm^{-2}}$ electron density, which is comparable to mobilities reported from films grown at higher temperatures. The results of this work provide a path toward the realization of high-quality, thermal-budget-compatible 2D semiconductors for heterogeneous integration with silicon manufacturing. |
| Databáze: |
arXiv |
| Externí odkaz: |
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