Epitaxial Integration of a Perpendicularly Magnetized Ferrimagnetic Metal on a Ferroelectric oxide for Electric-Field Control
Autor: | Zhang, Xin, Qin, Peixin, Feng, Zexin, Yan, Han, Wang, Xiaoning, Zhou, Xiaorong, Wu, Haojiang, Chen, Hongyu, Meng, Ziang, Liu, Zhiqi |
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Rok vydání: | 2021 |
Předmět: | |
Zdroj: | Rare Metals 41, 1554-1562 (2022) |
Druh dokumentu: | Working Paper |
DOI: | 10.1007/s12598-021-01898-8 |
Popis: | Ferrimagnets, which contain the advantages of both ferromagnets (detectable moments) and antiferromagnets (ultrafast spin dynamics), have recently attracted great attention. Here we report the optimization of epitaxial growth of a tetragonal perpendicularly magnetized ferrimagnet Mn2Ga on MgO. Electrical transport, magnetic properties and the anomalous Hall effect (AHE) were systematically studied. Furthermore, we successfully integrated high-quality epitaxial ferrimagnetic Mn2Ga thin films onto ferroelectric PMN-PT single crystals with a MgO buffer layer. It was found that the AHE of such a ferrimagnet can be effectively modulated by a small electric field over a large temperature range in a nonvolatile manner. This work thus demonstrates the great potential of ferrimagnets for developing high-density and low-power spintronic devices. Comment: 21 pages 9 figures |
Databáze: | arXiv |
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