| Autor: |
Sittig, Robert, Nawrath, Cornelius, Kolatschek, Sascha, Bauer, Stephanie, Schaber, Richard, Huang, Jiasheng, Vijayan, Ponraj, Portalupi, Simone Luca, Jetter, Michael, Michler, Peter |
| Rok vydání: |
2021 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
The GaAs-based material system is well-known for the implementation of InAs quantum dots (QDs) with outstanding optical properties. However, these dots typically emit at a wavelength of around 900nm. The insertion of a metamorphic buffer (MMB) can shift the emission to the technologically attractive telecom C-band range centered at 1550nm. However, the thickness of common MMB designs limits their compatibility with most photonic resonator types. Here we report on the MOVPE growth of a novel InGaAs MMB with a non-linear indium content grading profile designed to maximize plastic relaxation within minimal layer thickness. Single-photon emission at 1550nm from InAs QDs deposited on top of this thin-film MMB is demonstrated. The strength of the new design is proven by integrating it into a bullseye cavity via nano-structuring techniques. The presented advances in the epitaxial growth of QD/MMB structures form the basis for the fabrication of high-quality telecom non-classical light sources as a key component of photonic quantum technologies. |
| Databáze: |
arXiv |
| Externí odkaz: |
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