Signature of topological non-trivial band structure in Ta$_{3}$SiTe$_{6}$
| Autor: | Roy, Shubhankar, Singha, Ratnadwip, Ghosh, Arup, Mandal, Prabhat |
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| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | Phys. Rev. Materials 5, 064203 (2021) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevMaterials.5.064203 |
| Popis: | The study of topology protected electronic properties is a fascinating topic in present day condensed matter physics research. New topological materials are frequently being proposed and explored through various experimental techniques. Ta$_{3}$SiTe$_{6}$ is a newly predicted topological semimetal with fourfold degenerate nodal-line crossing in absence of spin-orbit coupling (SOC) and an hourglass Dirac loop, when SOC is included. Recent angle-resolved photoemission spectroscopy study in this material, has also confirmed Dirac like dispersions and two nodal-lines near the Fermi energy, protected by nonsymmorphic glide mirror symmetry. In this work, we present the detailed magnetotransport properties of single crystalline Ta$_{3}$SiTe$_{6}$. A nonsaturating magnetoresistance has been observed. Hall measurements reveal hole type charge carriers with high carrier density and a moderate value of carrier mobility. Furthermore, we report a robust planar Hall effect, which persists up to high temperatures. These results validate the nontrivial nature of the electronic band structure. Comment: 7 Figures |
| Databáze: | arXiv |
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