| Autor: |
García-Redondo, Fernando, Prabhat, Pranay, Bhargava, Mudit, Dray, Cyrille |
| Rok vydání: |
2021 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| Popis: |
This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the stochastic behavior of MTJs and to generate Verilog-A compact models for their simulation in large VLSI designs, addressing the need for an industry-ready model accounting for real-world reliability and scalability requirements. Device dynamics are described by the Landau-Lifshitz-Gilbert-Slonczewsky (s-LLGS ) stochastic magnetization considering Voltage-Controlled Magnetic Anisotropy (VCMA) and the non-negligible statistical effects caused by thermal noise. Model behavior is validated against the OOMMF magnetic simulator and its performance is characterized on a 1-Mb 28 nm Magnetoresistive-RAM (MRAM) memory product. |
| Databáze: |
arXiv |
| Externí odkaz: |
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