| Autor: |
Müller, Valentin L., Yan, Yuan, Kashuba, Oleksiy, Trauzettel, Björn, Abdelghany, Mohamed, Kleinlein, Johannes, Beugeling, Wouter, Buhmann, Hartmut, Molenkamp, Laurens W. |
| Rok vydání: |
2021 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1021/acs.nanolett.1c01271 |
| Popis: |
We experimentally investigate the effect of electron temperature on transport in the two-dimensional Dirac surface states of the three-dimensional topological insulator HgTe. We find that around the minimal conductivity point, where both electrons and holes are present, heating the carriers with a DC current results in a non-monotonic differential resistance of narrow channels. We show that the observed initial increase in resistance can be attributed to electron-hole scattering, while the decrease follows naturally from the change in Fermi energy of the charge carriers. Both effects are governed dominantly by a van Hove singularity in the bulk valence band. The results demonstrate the importance of interband electron-hole scattering in the transport properties of topological insulators. |
| Databáze: |
arXiv |
| Externí odkaz: |
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