| Autor: |
Zheng, Jiyuan, Jones, Andrew H., Tan, Yaohua, Rockwell, Ann K., March, Stephen, Ahmed, Sheikh Z., Dukes, Catherine A., Ghosh, Avik W., Bank, Seth R., Campbell, Joe C. |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters 115.12 (2019): 122105 |
| Druh dokumentu: |
Working Paper |
| Popis: |
The unprecedented wide bandgap tunability (~1 eV) of Al$_x$In$_{1-x}$As$_y$Sb$_{1-y}$ latticed-matched to GaSb enables the fabrication of photodetectors over a wide range from near-infrared to mid-infrared. In this paper, the valence band-offsets in AlxIn1-xAsySb1-y with different Al compositions are analyzed by tight-binding calculations and X-ray photoelectron spectroscopy (XPS) measurements. The observed weak variation in valence band offsets is consistent with the lack of any minigaps in the valence band, compared to the conduction band. |
| Databáze: |
arXiv |
| Externí odkaz: |
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