| Autor: |
Pachat, R., Ourdani, D., van der Jagt, J. W., Syskaki, M. -A., Di Pietro, A., Roussigné, Y., Ono, S., Gabor, M. S., Chérif, M., Durin, G., Langer, J., Belmeguenai, M., Ravelosona, D., Diez, L. Herrera |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Phys. Rev. Applied 15, 064055 (2021) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1103/PhysRevApplied.15.064055 |
| Popis: |
In Ta/CoFeB/HfO2 stacks a gate voltage drives, in a nonvolatile way, the system from an underoxidized state exhibiting in-plane anisotropy (IPA) to an optimum oxidation level resulting in perpendicular anisotropy (PMA) and further into an overoxidized state with IPA. The IPA$\,\to\,$PMA regime is found to be significantly faster than the PMA$\,\to\,$IPA regime, while only the latter shows full reversibility under the same gate voltages. The effective damping parameter also shows a marked dependence with gate voltage in the IPA$\,\to\,$PMA regime, going from 0.029 to 0.012, and only a modest increase to 0.014 in the PMA$\,\to\,$IPA regime. The existence of two magneto-ionic regimes has been linked to a difference in the chemical environment of the anchoring points of oxygen species added to underoxidized or overoxidized layers. Our results show that multiple magneto-ionic regimes can exist in a single device and that their characterization is of great importance for the design of high performance spintronics devices. |
| Databáze: |
arXiv |
| Externí odkaz: |
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