Manipulate the Electronic State of Mott Iridate Superlattice through Protonation Induced Electron-Filling
| Autor: | Wang, Meng, Hao, Lin, Yin, Fang, Yang, Xin, Shen, Shengchun, Zou, Nianlong, Cao, Hui, Yang, Junyi, Lu, Nianpeng, Wu, Yongshun, Zhang, Jianbing, Zhou, Hua, Li, Jia, Liu, Jian, Yu, Pu |
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| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | advanced functional materials, 2021 |
| Druh dokumentu: | Working Paper |
| Popis: | Spin-orbit-coupled Mott iridates show great similarity with parent compounds of superconducting cuprates, attracting extensive research interests especially for their electron-doped states. However, previous experiments are largely limited within a small doping range due to the absence of effective dopants, and therefore the electron-doped phase diagram remains elusive. Here we utilize an ionic-liquid-gating induced protonation method to achieve electron-doping into a 5d Mott-insulator built with SrIrO3/SrTiO3 superlattice, and achieve a systematic mapping of its electron-doped phase diagram with the evolution of the iridium valence state from 4+ to 3+, equivalent to doping of one electron per iridium ion. Along increasing doping level, the parent Mott-insulator is first turned into a localized metallic state with gradually suppressed magnetic ordering, and then further evolved into a nonmagnetic band insulating state. This work forms an important step forward for the study of electron-doped Mott iridate systems, and the strategy of manipulating the band filling in an artificially designed superlattice structure can be readily extended into other systems with more exotic states to explore. Comment: accepted |
| Databáze: | arXiv |
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