Evaluation of the Sensitivity of RRAM Cells to Optical Fault Injection Attacks

Autor:	Petryk, Dmytro, Dyka, Zoya, Perez, Eduardo, Mahadevaiaha, Mamathamba Kalishettyhalli, Kabin, Ievgen, Wenger, Christian, Langendoerfer, Peter
Rok vydání:	2021
Předmět:	Computer Science - Cryptography and Security Computer Science - Hardware Architecture
Druh dokumentu:	Working Paper
DOI:	10.1109/DSD51259.2020.00047
Popis:	Resistive Random Access Memory (RRAM) is a type of Non-Volatile Memory (NVM). In this paper we investigate the sensitivity of the TiN/Ti/Al:HfO2/TiN-based 1T-1R RRAM cells implemented in a 250 nm CMOS IHP technology to the laser irradiation in detail. Experimental results show the feasibility to influence the state of the cells under laser irradiation, i.e. successful optical Fault Injection. We focus on the selection of the parameters of the laser station and their influence on the success of optical Fault Injections.
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2103.12435 Zobrazit plný text záznamu View this record from Arxiv