Topological Semimetals for Scaled Back-End-Of-Line Interconnect Beyond Cu
Autor: | Chen, Ching-Tzu, Bajpai, Utkarsh, Lanzillo, Nicholas A., Hsu, Chuang-Han, Lin, Hsin, Liang, Gengchiau |
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Rok vydání: | 2021 |
Předmět: | |
Zdroj: | 2020 IEEE International Electron Devices Meeting (IEDM), 32.4. 1-32.4. 4 |
Druh dokumentu: | Working Paper |
DOI: | 10.1109/IEDM13553.2020.9371996 |
Popis: | The resistance bottleneck in metal-interconnect scaling calls for new interconnect materials. This paper explores topological semimetals as a potential solution. After reviewing the desirable properties of topological semimetals for back-end-of-line (BEOL) interconnects, we use CoSi as an example to demonstrate the decreasing resistance-area product with scaling and provide material-search guidelines. Comment: 4 pages, 12 figures |
Databáze: | arXiv |
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