Topological Semimetals for Scaled Back-End-Of-Line Interconnect Beyond Cu

Autor: Chen, Ching-Tzu, Bajpai, Utkarsh, Lanzillo, Nicholas A., Hsu, Chuang-Han, Lin, Hsin, Liang, Gengchiau
Rok vydání: 2021
Předmět:
Zdroj: 2020 IEEE International Electron Devices Meeting (IEDM), 32.4. 1-32.4. 4
Druh dokumentu: Working Paper
DOI: 10.1109/IEDM13553.2020.9371996
Popis: The resistance bottleneck in metal-interconnect scaling calls for new interconnect materials. This paper explores topological semimetals as a potential solution. After reviewing the desirable properties of topological semimetals for back-end-of-line (BEOL) interconnects, we use CoSi as an example to demonstrate the decreasing resistance-area product with scaling and provide material-search guidelines.
Comment: 4 pages, 12 figures
Databáze: arXiv