| Autor: |
Bhattacharyya, Arkka, Roy, Saurav, Ranga, Praneeth, Shoemaker, Daniel, Song, Yiwen, Lundh, James Spencer, Choi, Sukwon, Krishnamoorthy, Sriram |
| Rok vydání: |
2021 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| Popis: |
We report on the demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown $\beta$-Ga$_2$O$_3$ metal-semiconductor field effect transistor (MESFET). The low-temperature (600$^{\circ}$C) heavy (n$^{+}$) Si-doped regrown layers exhibit extremely high conductivity with sheet resistance of 73 $\Omega$/$\square$ and record low metal/n$^{+}$-Ga$_2$O$_3$ contact resistance of 80 m$\Omega$.mm and specific contact resistivity of 8.3$\times$10$^{-7}$ $\Omega$.cm$^{2}$ were achieved. The fabricated MESFETs exhibit a maximum drain-to-source current of 130 mA/mm, a high I$_{ON}$/I$_{OFF}$ of $>$10$^{10}$ with a high power FOM of 25 MW/cm$^{2}$ were achieved without any field plates. Nanoparticle-assisted Raman thermometry, thermal modeling, and infrared thermography were performed to assess the device self-heating under the high current and power conditions. This demonstration shows the promise of MOVPE technique for the realization of high-performance lateral $\beta$-Ga$_2$O$_3$ devices and also highlights the need for device-level thermal management. |
| Databáze: |
arXiv |
| Externí odkaz: |
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