Memory device employing hysteretic properties of a tungsten filament in superfluid helium-4

Autor:	Shih, Che-Chi, Huang, Ming-Huei, Chang, Pang-Chia, Yu, Po-Wei, Jian, Wen-Bin, Kono, Kimitoshi
Rok vydání:	2020
Předmět:	Physics - Applied Physics
Druh dokumentu:	Working Paper
Popis:	A tungsten filament immersed in superfluid helium has strong hysteretic $I$-$V$ characteristics. By increasing the applied voltage, a remarkable current drop occurs at a transition voltage, at which the filament enters a non-ohmic hot state and becomes covered with a helium gas sheath. The return to an ohmic state occurs at a lower voltage because of the poor heat conduction of the gas sheath. Hence, the $I$-$V$ characteristic is strongly hysteretic. The stable hysteresis window was employed to fabricate a novel memory device, which demonstrated fast switching and stable reading. Comment: 12 pages, 6 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2012.15123 Zobrazit plný text záznamu View this record from Arxiv