Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

Autor: Myers, Daniel, Espenlaub, Andrew, Gelzinyte, Kristina, Young, Erin, Martinelli, Lucio, Peretti, Jacques, Weisbuch, Claude, Speck, James
Rok vydání: 2020
Předmět:
Zdroj: Applied Physics Letters, American Institute of Physics, 2020, 116 (9), pp.091102
Druh dokumentu: Working Paper
DOI: 10.1063/1.5125605
Popis: We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and does not droop; thus, the efficiency losses from the intrinsic, interband, electron-electron-hole, or electron-hole-hole Auger should not be a significant source of hot carriers. The detection of hot electrons in this case suggests that an alternate hot electron generating process is occurring within these devices, likely a trap-assisted Auger recombination process.
Databáze: arXiv