Design of on-chip plasmonic modulator with vanadium-dioxide in hybrid orthogonal junctions on Silicon-on-Insulator
Autor: | Tanyi, Gregory, Sun, Miao, Unnithan, Ranjith |
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Rok vydání: | 2020 |
Předmět: | |
Druh dokumentu: | Working Paper |
Popis: | We present a plasmonic modulator based on hybrid orthogonal silver junctions using vanadium dioxide as the modulating material on the silicon on insulator. The modulator has an ultra-compact footprint of 1.8{\mu}m x 1{\mu}m with a 100nm x 100nm modulating section based on the orthogonal geometry. We take advantage of large change in the refractive index of vanadium dioxide during its phase transition to achieve a high modulation depth of 46.89dB/{\mu}m. We also provide a fabrication strategy for the development of this device. The device geometry has potential applications in the development of next generation high frequency photonic modulators for optical communications which require a nanometer scale footprint, large modulation depth and small insertion losses. Comment: 10 pages, 8 figures, to be submitted to IEEE Photonics Technology Letters Journal |
Databáze: | arXiv |
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