Large-Signal and High--Frequency Analysis of Nonuniformly Doped or Shaped PN-Junction Diodes

Autor:	Barybin, Anatoly A., Santos, Edval J. P.
Rok vydání:	2020
Předmět:	Physics - Applied Physics Condensed Matter - Mesoscale and Nanoscale Physics Physics - Computational Physics
Zdroj:	Journal of Applied Physics 109, 114510 (2011)
Druh dokumentu:	Working Paper
DOI:	10.1063/1.3592206
Popis:	An analytical theory of non-uniformly doped or shaped PN-junction diodes submitted to large-signals at high frequencies is presented. The resulting expressions can be useful to evaluate the performance of semiconductor device modeling software. The transverse averaging technique is employed to reduce the three-dimensional charge carrier transport equations into the quasi-one-dimensional form, with all physical quantities averaged out over the longitudinally-varying cross section. Although, it is assumed an axial symmetry, this approach gives rise to useful analytic expressions for the static current--voltage characteristics, the diffusion conductance, and diffusion capacitance as a function of the signal amplitude and the cross section non-uniformity. Comment: 14 pages, 3 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2011.13896 Zobrazit plný text záznamu View this record from Arxiv