| Autor: |
Afonenko, Aleksandr, Ushakov, Dmitry, Alymov, Georgy, Dubinov, Aleksandr, Morozov, Sergey, Gavrilenko, Vladimir, Svintsov, Dmitry |
| Rok vydání: |
2020 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1088/1361-6463/abe07e |
| Popis: |
Operation of semiconductor lasers in the 20--50 $\mu$m wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. Using a comprehensive model accounting for carrier drift and diffusion, electron and hole capture in quantum wells, Auger recombination, and heating effects, we show the feasibility of lasing at $\lambda = 26...30$ $\mu$m at temperatures up to 90 K. The output power in the pulse can reach up to 8 mW for microsecond-duration pulses. |
| Databáze: |
arXiv |
| Externí odkaz: |
|
