Large magnetoresistance observed in {\alpha}-Sn/InSb heterostructures
| Autor: | Ding, Yuanfeng, Song, Huanhuan, Huang, Junwei, Yao, Jinshan, Gu, Yu, Wei, Lian, Deng, Yu, Yuan, Hongtao, Lu, Hong, Chen, Yan-Feng |
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| Rok vydání: | 2020 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | In this study, we report the epitaxial growth of a series of {\alpha}-Sn films on InSb substrate by molecular beam epitaxy (MBE) with thickness varying from 10 nm to 400 nm. High qualities of the {\alpha}-Sn films are confirmed. An enhanced large magnetoresistance (MR) over 450,000% has been observed compared to that of the bare InSb substrate. Thickness, angle and temperature dependent MR are used to demonstrate the effects of {\alpha}-Sn films on the electrical transport properties. Comment: 24 pages, 5 figures |
| Databáze: | arXiv |
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